| 摘要 |
PURPOSE:To simply obtain a flat interlayer insulation film without the use of etching and the like by a method wherein a metallic wiring layer of a required shape made of a member which does not transmit light is formed on the surface of a semiconductor substrate, the back of the substrate being irradiated with light, and an insulating photochemical reacted substance such as SiO2 being then deposited only on the surface having no metallic wiring layer. CONSTITUTION:An insulation film 5a is adhered to the surface of the Si substrate 5 provided with a required element region, and an Al lower side wiring layer 12 shaped into a desired pattern is formed thereon. Next, this substrate 5 is placed on a transparent glass plate 6 provided at the bottom of an air-tight chamber 3, and is then irradiated from back with ultraviolet rays 14 out of a light source 7 arranged under the glass plate 6. At the same time, the SiO2 film 16 is produced on the surface of the substrate 5 only in 15, not shielded by the wiring layer 12, while being made level with the surface of the layer 12 by introduction of the mixed gas of SiH4 and N2 into the chamber 3. In such a manner, the film 16 is produced by irradiation of the surface for forming the film 16 with light, and accordingly the elimination of stepwise differences is facilitated. |
