发明名称 DEVICE FOR PLASMA CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE:To increase the film-forming speed without losing the uniformity of a film thickness by providing a processing chamber with an opposite electrode and a discharge space and by arranging an auxiliary electrode around the substrate electrode arranged oppositely to said opposite electrode without contact to it thereby maintaining a discharge stable. CONSTITUTION:In a processing chamber 10, an opposite electrode 11 and a substrate 12 are arranged with facing each other vertically and with having the predetermined discharge space 13 and these electrodes are electrically isolated from the processing chamber 10 by shaft closing parts 14 and 15. The electrode 11 is provided with an exhaust vent 16 and a flowing path 17 for a material gas and the electrode 12 is provided with a heater 19 and is applied a high-frequency power source. A substrate 30 is put on the electrode 12 and the processing chamber 10 is vacuumed. An auxiliary electrode 40 is arranged around the electrode 12 without contact with it and the surface where a discharge is produced of the electrode 40 is covered with a screening plate 41 made of an electrically insulating material. The electrode 40 is arranged on the inside wall of the processing chamber 10 in the position where its surface does not project upward from a surface of the electrode 12. Thus, the film-forming speed can be increased with maintaining a discharge stable even if the high-frequency power applied to the electrode 12 is increased.
申请公布号 JPS6057613(A) 申请公布日期 1985.04.03
申请号 JP19830164969 申请日期 1983.09.09
申请人 HITACHI SEISAKUSHO KK 发明人 YUKIMASA TOORU;NAKATSUI FUJITSUGU;ODA KAZUHIRO
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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