| 摘要 |
PURPOSE:To form a stable surface protective film having no damage on the interface by attaching metallic atoms on a crystalline surface in high vacuum, exposing the metallic atoms in a reaction gas and changing an adhering metal into an insulator. CONSTITUTION:A clean GaAs surface is formed to a GaAs semiconductor 11 by using an ion sputtering gun 13 and an As molecular-beam generating cell 14 in a surface purifying chamber 12 under ultra-high vacuum. An Al thin-film is shaped on the clean surface by using a cell 15. A sample is transferred into an insulating treating chamber separated by a gate valve 16, and oxygen having high purity is introduced through a reaction-gas introducing port 18. The sample is heated at that time. Consequently, an Al metal formed on the GaAs surface is changed into Al2O3. According to the method, a stable surface protective film having no damage on the interface can be formed. |
