| 摘要 |
PURPOSE:To etch and to remove an unnecessary thin film part at manufacture of a semiconductor device by a method wherein a substrate is put in a reactive gas atmosphere at pattern formation process time, and the thin film part on the back of the substrate is irradiated by a beam of laser. CONSTITUTION:An Si wafer 1 equipped in a cassette 20 is inserted into a cassette 20' through a gate valve 11, a preliminary chamber 12, a gate valve 11', a process chamber 14, a gate valve 11'', a preliminary chamber 15 and a gate valve 11''' to be taken out. An intake vent 18 and an exhaust vent 19 are provided to the process chamber 14, and Cl2 gas is supplied. When the back of the wafer 1 is irradiated by a beam of laser 17, a poly-Si layer on the irradiated surface is etched to be removed. |
