发明名称 PROCEDIMENTO PER IL TRATTAMENTO TERMICO DI DISCHI DI MATERIALE SEMICONDUTTORE
摘要 1502754 Screw conveyers SIEMENS AG 24 Sept 1976 [22 Dec 1975 3 May 1976 2 July 1976] 39644/76 Heading B8A [Also in Division H1] In a method of heat-treating semi-conductor wafers 4, during the heat-treatment, the wafers are successively conveyed through a furnace tube 1 by means of rotating rods 2, 9 provided with helical grooves (3), Fig. 3 (not shown), of the same pitch to receive the edges of the wafers. The ends 2, 9 typically of silicon, and projecting beyond the ends of the tube 1 of quartz or silicon, may have grooves varying in pitch along their lengths so as to provide, e.g., higher transfer rate of silicon wafers at the ends of the tube. The tube 1 may be of a rectangular cross-section. It is stated that the method enables uniform heat-treatment of the wafers by providing a constant temperature-time characteristic.
申请公布号 IT1067293(B) 申请公布日期 1985.03.16
申请号 IT19760030618 申请日期 1976.12.20
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人
分类号 H01L21/22;B65G33/06;C30B31/10;C30B31/14;H01L21/324;(IPC1-7):H01L/ 主分类号 H01L21/22
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