发明名称 |
METHOD FOR FORMING A COPPER BASED METAL PATTERN |
摘要 |
A composite mask (5A, 6A) is formed by sequentially depositing blanket layers (5) and (6) of molybdenum and of a material respectively selected from the group consisting of MgO and Al2O3 on the surface of a copper layer (3), and producing in these layers (5) and (6) a pattern of openings corresponding to the negative of the desired copper pattern (3). Using said mask (5A, 6A) the portions of copper layer (3) exposed in said openings are removed, preferably by dry etching. MgO or Al2O3 adhere well to Mo and Mo adheres well to copper. The Mo layer (5A) also serves as a diffusion barrier for the copper. …<??>The method is applicable in forming copper interconnect metallurgy for components such as semiconductor or dielectric substrates. |
申请公布号 |
DE3168374(D1) |
申请公布日期 |
1985.02.28 |
申请号 |
DE19813168374 |
申请日期 |
1981.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SCHAIBLE, PAUL MARTIN;SCHWARTZ, GERALDINE COGIN |
分类号 |
H01L21/302;C23F1/00;C23F4/00;H01L21/3065;H05K3/06;H05K3/38;(IPC1-7):H05K3/06;H01L21/88 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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