| 摘要 |
PURPOSE:To enable the production of a large-sized titled crystal free from cut layer, by placing a V-group element and a crystal growth vessel divided into plural sections and containing the molten liquid of a III-group element in the same reaction tube, heating the assembly, and cooling the molten liquid. CONSTITUTION:The molten liquid of a III-group element is charged into the crystal growth vessel 2 in an amount necessary to obtain the objective III-Vgroup compound semiconductor thin film crystal. The partition plates 1 are fitted to the plural thin grooves in the crystal growth vessel 2 to divide the crystal growth vessel 2 into plural sections. The crystal growth vessel 2 and the V-group element 3 are placed in one reaction tube 4, evacuated and sealed. The crystal growth vessel 2 containing the molten liquid 5 of the III-Vgroup element is heated at a temperature to effect the synthesis of a III-group compound. At the same time, the temperature of the coolest part of the reaction tube 4 is maintained at a level to keep the vapor pressure of the V- group element 3 in the reaction tube 4 to a level higher than the decomposition vapor pressure of the III-V group element from the III-V group compound at the synthesizing temperature of the III-V group compound. After the completion of the synthesis of the III-V group compound, the reaction tube 4 is cooled to obtain the objective crystal. |
