| 摘要 |
PURPOSE:To improve the dampproof property of a plasma silicon oxide film (P-SiO) to be used as the material for the passivation film of a semiconductor device by a method wherein RF power density, RF frequency and the degree of vacuum are specified. CONSTITUTION:The RF power density when P-SiO is formed by performing a plasma CVD method is set at 0.5W/cm<2> or above, RF frequency is set at 2MHz or below, and the degree of vacuum is set at 0.7Torr or below. As a result, the etching speed is reduced to 10Angstrom /sec or below, the non-hygroscopic hour of the P-SiO of 200hr or more can be secured by performing a vapor pressure inspecting method (PCT), and a high quality of P-SiO having excellent dampproof property with which excellent reliability can be maintained even when passivation is used can be obtained. |
