| 摘要 |
PURPOSE:To form stably an NbN film having a uniform compsn. in the stage of forming an NbN film on the surface of an Si substrate or the like by using a sputtering device having an opposed target type sputtering part and a leading- out part for ion beam. CONSTITUTION:A device having an opposed target type sputtering part A and a leading-out part B for ion beam is used in the stage of forming NbN as a sintered hard heat-resistant material having super-conductivity on the surface of an Si susbstrate S, etc. A magnet coil 3 is disposed to the outside circumference of Nb targets T1, T2 which are opposed to each other in parallel. A gaseous mixtue composed of Ar+N is introduced through an introducing pipe 2 into the device. The plasma atmosphere 7 generated between the targets T1 and T2 and the sputtered ion of Nb accelerated by the coil 3 in the regions 8, 9 between the targets reacts with the gaseous N and is accelerated by a grid G as NbN ionized particles 10. Said particles pass through the holes 11, 12 of the target T2 and the grid G and collide against the Si substrate S thereby forming an NbN film having a uniform compsn. on the surface thereof. |
