| 摘要 |
<p>An automatic etched-pit counting method employs a computerized image-processing technique for measuring the density of etched pits on the surface of a semiconductor crystal substrate (wafer) W. The method includes the steps of: calculating an average unit area Ap of an isolated etched pit on the surface of the semiconductor crystal substrate W for each wafer or for each measuring point; dividing the area Sk of superposed collective etched pits k by the average unit area Ap; converting the obtained quotient into an integer, thereby obtaining the number nk of the etched pits within the area Sk; adding together the number (u) of the isolated etched pits and the number nk of the collective etched pits; and taking the obtained sum total as the number N of all the etched pits on the substrate surface.</p> |
