| 摘要 |
PURPOSE:To prevent the generation of a gap in the boundary of SiO2 with Si by controlling heat treatment and an atmosphere for that treatment when performing selective epitaxial growth under a reduced pressure. CONSTITUTION:The heat treatment before epitaxial growth is performed with increasing the temperature for heat treatment gradually from a starting time ts to the time t1 and keeping it 1,000 deg.C to the time t2, thereby restraining the selective etching of SiO2 in the boundary of the SiO2 with Si. Next, the temperature is increased as soon as possible to the time t3 when the epitaxial growth temperature reaches 1,080 deg.C and at the same time as this temperature is attained, reactive gas is introduced to form an epitaxial layer by the time t4. After the formation of the epitaxial layer is completed, the temperature is gradually decreased till an ending time tE not to cause a crystal defect. |
