| 摘要 |
PURPOSE:To prevent the generation of the temperature dependency in offset by forming an silicon oxide film on the surface on the circuit-forming side on an silicon diaphragm and applying a low thermal expanding polyimide group resin on the silicon oxide film. CONSTITUTION:A P-type diffusion resistor 2 is shaped onto a diaphragm 1, and a resistance value alters by a piezoresistance effect when pressure is applied. An silicon oxide film 3 is formed through a CVD method, etc., and the infiltration of moisture to an silicon substrate is prevented. A low thermal expanding polyimide film 4 is shaped through a method such as spin coating, and the diffusion of an impurity to the silicon diaphragm 1 is obviated while the temperature dependency in offset is protected. |
