| 摘要 |
PURPOSE:To improve the switching speed by using a resistor as a load of a switching transistor (TR) in a basic circuit using a normally-on field effect TR. CONSTITUTION:The resistor RL is used as a load of the switching TRQ1, the value of the resistor RL is decreased sufficiently, a power supply voltage Vdd is increased sufficiently and a point P of a load line is set within the saturating region of the drain characteristic of the switching TRQ1. When the field effect REQ1 is in the saturating region, the drain end of a depletion layer under a gate electrode spreads to the entire thickness of the operating layer. Thus, a capacitance between the drain and gate is remarkably small in the saturation region and the switching speed is improved. |
