| 摘要 |
PURPOSE:To increase the mobility of electrons and to enable high speed and high integration of the elements by forming a gate out of low-resistance high- melting-point metal and by forming platinum silicide in a diffusion layer. CONSTITUTION:In MISFETs Q1 and Q2, the gate insulating films 5 consisting of Si oxide exist and gate electrodes are formed out of two layers of an Mo layer 6 and a Pt silicide layer 7. On source and drain regions 2 and 3, a source and drain electrode 9 consisting of Pt silicide exists and it is isolated from the gate electrodes 6 and 7 by the side wall 8 consisting of Si oxide. The resistance value of the Mo layer formed as the gate electrode is about 0.5OMEGA/square and that of the Pt silicide layer formed as the source and drain electrode is about 1.0OMEGA/ square. At the same time, the gate electrode and the source and drain electrode attain the lowest resistance which has been impossible up to now. |
