| 摘要 |
PURPOSE:To load semiconductor elements at multistages, and to mount the semiconductor elements with high density by arranging lead sections for an internal wiring in a cavity at two steps or more and forming semiconductor element loading surfaces to the bottom and intermediate position of said cavity. CONSTITUTION:A first semiconductor element 9 is loaded on the bottom of a cavity 8 formed to a ceramic package base 7 while using an Au-Si eutectic, etc. as a solder material. First internal lead sections 10 are arranged around the cavity 8, and the semiconductor element 9 and the first internal lead sections 10 are connected by bonding wires 11. A semiconductor element 13 is loaded on one main surface of a ceramic base 12 while using the Au-Si eutectic, etc. as the solder material, and the back of the ceramic base 12 and a loading section 14 are welded and fixed by a solder material such as solder. The semiconductor element 13 and second internal lead sections 15 are connected by bonding wires. Lastly, these semiconductor elements are sealed in the ceramic package base 7 by a sealing cover 16 with the brazing material such as solder. |
