| 摘要 |
PURPOSE:To obtain a transistor having excellent high frequency characteristics by a method wherein the lead-out resistance of an emitter is sufficiently reduced using an emitter forming method with which the emitter can be formed in a self- matching manner and, at the same time, the excellent contact of a base electrode is obtained. CONSTITUTION:The laminaed film of an SiO2 film 105 and an Si3N4 film 101 is covered on the N<-> type epitaxial layer 106 grown on a substrate, said laminted film on the circumferential part is removed, and a thick interelement insulating oxide film 102 is formed. Then, a P type base region 103 is formed under the laminated film by performing a P type impurity ion implantation using the film 102 as a mask, an aperture is provided on the laminated film, and a P type base contact region 104 is formed in the region 103 by performing an ion implantation again. Subsequently, an SiO2 film 201 is coated on the region 104, the laminated film located between the region 104 and the film 201 is removed, an N type polycrystalline Si film 301 is deposited on the whole surface, the impurities in the film 301 are diffused by performing a heat treatment, and an N type emitter region 302 is generated in the region 103. Then, a stacked body consisting of an Si film 301, a metal 401 for sintering and an oxide film 402 is formed on the region 302 only, and the stacked body is surrounded by an SiO2 film 501. |
