| 摘要 |
PURPOSE:To microminiaturize an MOS type solid-state image pickup element while improving sensitivity of a short wavelength by partially deepening the depth of a diffusion layer in a light-receiving section for the element. CONSTITUTION:A thick field insulating film 6 is formed to the peripheral section of a P type Si substrate 1, and an N type region 4 is diffused and formed adjoined to the film 6. A thin gate insulating film is applied on the surface of the substrate 1 surrounded by the film 6 and a gate electrode 5 is formed in a predetermined region, P ions are implanted while using the electrode 5 and the film 6 as masks, and a deep N type region 9 is shaped through heat treatment, extension and diffusion. While ions are implanted and a shallow N type region 10 is formed around the region 9 through the same treatment and used as a photodiode for an image pick-up element, the regions 9 and 10 are employed as a light-receiving section 11. |
