| 摘要 |
PURPOSE:To achieve a high open-edge voltage and improve photoelectric conversion efficiency by providing a highly conductive n-type semiconductor thin film between a transparent electrode and a p-type semiconductor thin film. CONSTITUTION:In a photoelectric conversion element formed by laminating a light transmission type substrate 1, a transparent electrode 2, a p-type semiconductor thin film 4. an i-type semiconductor thin film 5, an n-type semiconductor thin film 6, and a rear-surface electrode 7 in this order, a highly conductive n-type semiconductor thin film a is placed between the transparent electrode 2 and the p-type semiconductor thin film 4. An n-type fine crystal thin film or an amorphous thin film can be used as the highly conductive n-type semiconductor thin film 3. Also, an n-type fine crystal silicon thin film, a fine crystal silicon thin film containing carbon, a fine crystal silicon carbide thin film, etc., can be used as the n-type fine crystal thin film and an amorphous silicon thin film, an amorphous silicon carbon thin film, etc., can be effectively used as the n-type amorphous thin film. It achieves an element with a high photoelectric conversion efficiency where the open-edge voltage is fully high. |
