TIME DIVISION EXCHANGE CIRCUIT

摘要

PURPOSE:To realize a large scale exchange circuit by using a switch cell comprising a control memory section constituting a control register and a switch switching section constituting a switch matrix as one unit and arranging the unit switch cells in matrix. CONSTITUTION:An MOS transistor (TR) N3 is opened by using a control memory address line 57 designating an address of an RAM cell of a control memory section 58 and a control signal is stored in a charge storage capacitor CO via a control signal bit line 55. Then a data signal read from an incoming side shift register opens an MOS TR N2 of the switch switching section 59 via an exchange data input line 51. In this case, the switching of the MOS TR N1 is predetermined by a value of a control signal stored in a charge storage capacitor CO, and the signal level of an exchange data read line 52 is decided by the NaND arithmetic of the value on the exchange data input line 51 and the charge storage capacitor CO and the result is latched to an outgoing side shift register. The unit cells like this are arranged for plurality in matrix.