| 摘要 |
PURPOSE:To activate a selective ion implantation layer as a metal having no heat resistance such as Al is left as it adheres by forming a film having specific relative permittivity and thickness on the ion implantation layer and annealing the film. CONSTITUTION:A film, relative permittivity thereof is 120pi/Zl and thickness thereof is lambda/4, is formed on the surface of a GaAs substrate 11. When planar electromagnetic waves 16 are projected, the energy of electromagnetic waves is transmitted efficiently over the lower section of the film 14, and an n<+> region 13 is heated and activated. Since the impedance of a section on which the film 14 is not attached is extremely low, impedance mismatching between said section and 120piOMEGA spatial impedance is large, the greater part of incident energy are reflected, and the temperatures of a gate metal 15 and the substrate surface 18 slightly rise. Zl represents the electromagnetic wave impedance of a semiconductor to which ions are implanted selectively and lambda a wavelength. The film 14 is effective when its relative permittivity epsilonr is kept within a range of the formula, and thickness may also be effective when it satisfies the formula of (2n+1)lambda/ 4(n=0,1...) without being limited to lambda/4. |
