| 摘要 |
PURPOSE:To obtain the titled device sufficiently responding to high resolution by a method wherein the potential of a control electrode region of floating state providing in a semiconductor transistor is controlled via capacitor, where the potential is then controlled by means of a clamping diode during the action of carrier accumulation, read-out, and refreshing. CONSTITUTION:An n<-> type layer 5 is epitaxially grown on an n<+> type Si sunstrate 1 and formed into island form by means of an SiO2 or Si3N4 film 4 for element isolation, the base region 6 of a p type bi-polar transistor is diffusion- formed in the surface layer part of the island-formed layer 5, and an n<+> emitter region 7 is provided therein. Next, after the entire surface of covered with an SiO3 film 3, an aperture is bored, an Al wiring 8 to lead out signals is connected to the region 7, a floated electrode 9 whereon pulses are impressed via film 3 is provided on the region 6. Besides, an Al collector electrode 12 is adhered to the back surface of a substrate 1 via n<+> type layer 11, and then the surface of the device is irradiated with a light 20 while the potential of the electrode 9 is controlled by the clamping diode via capacitor generating in the element. |
