| 摘要 |
PURPOSE:To reduce the mechanical impairment of an active layer due to bonding by forming an electrode on the active layer side wired on a part of a semiconductor substrate with an insulating film interlaid and an ohmic electrode of the same conductivity type as that of the semiconductor substrate on a part of the substrate wherefrom a part of the active layer is removed. CONSTITUTION:A P-N junction is formed by an N-type GaAs layer 2 and a P-type GaAs layer 3 and an ohmic junction is formed on the P-type GaAs layer 3, while a P electrode 6 is formed on an N-type GaAs substrate 1 with an insulating film 9 interlaid. Then, an N electrode 7 is provided in ohmic connection on a part of the N-type GaAs substrate 1 wherefrom parts of the N-type GaAs layer 2, the P-type GaAs layer 3 and a P-type AlGaAs layer 4 formed on the N-type GaAs substrate 1 are removed. This N electrode 7 is isolated by an insulating film 8 from the semiconductor layers formed on the N-type GaAs substrate 1 and having a photoelectric conversion function. Connection of an external lead terminal is made at the position of the P electrode 6. According to this constitution, the mechanical impairment of the P-type GaAs layer 3, the N-type GaAs layer 2 and the P-N junction 5 which have the photoelectric conversion function can be reduced. |
