| 摘要 |
<p>PURPOSE:To obtain a thin film diode having preferable heat resistance and less ageing change by gradually increasing the forming temperature of a semiconductor layer from the initial of the formation. CONSTITUTION:The patterned first electrode 6 is formed on a transparent substrate 5 of glass or alumina. A semiconductor layer 7 is formed of an N type semiconductor layer, an I type semiconductor layer and a P type semiconductor layer in this sequence from the lower layer on the first electrode 6. An a-si thin film is used by a plasma CVD method as a semiconductor material, P is used as the N type layer, and B is doped on the P type layer. After forming the layer 7, heat treatments for performing to pattern a necessary part and for laminating the inter layer insulating layer 8 of the necessary parts are executed, thereby causing frequency the deterioration of the withstand voltage characteristic of the thin film diode and leakage. Accordingly, the substrate temperature during the formation of the layer 7 is gradually increased to thermally stabilizing the layer 7 to remove the defect. The rise of the substrate temperature is as shown in Figures, and even if not only continuous rise but also stepwise rise can obtain sufficient effect.</p> |
