SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent the bonding damage due to mutual diffusion between a semiconductor layer and a wiring material by forming a barrier layer formed of nitrided titanium and titanium under wirings or therein as a barrier layer for preventing the mutual diffusion of wirings and a substance for forming a substrate to be connected between the wiring and the substrate to be connected in contact with the wirings. CONSTITUTION:A barrier layer formed of a mixture layer or a nitrided titanium and a titanium or a triple layer formed of titanium-nitrided titanium-titanium is formed as a barrier layer 6 for preventing the mutual diffusion of wirings and a substance for forming a substrate to be connected between the wirings and the substrate to be connected in contact with the wirings. The barrier layer formed of a mixture of TiN and Ti of the layer 6 is formed by a sputtering method using Tin/Ti mixture target formed by a simultaneous sputtering method using targets of TiN and Ti or a hot pressing a material mixed at the prescribed ratio with the TiN and the Ti.