发明名称 OXIDE CATHODE STRUCTURE AND ITS MANUFACTURE
摘要 <p>PURPOSE:To obtain the captioned structure having high performance and a long life by a method, in which the base metal surface is coated with Ba and SiO2 through a mask having a controlled opening ratio for controlling the coating ratio and the thickness of a barium silicate layer while secondly coating the whole surface with Ni in order to control the depth of the barium silicate layer. CONSTITUTION:A smooth coppor mask chemically etched in the dotted shape is mounted on a base metal, in which a disk of the alloy of Ni-Mg.Si containing 0.06wt% of Mg and 0.03wt% of Si is welded on the tip of the cathode sleeve 5, a Ba film is evaporated, further the SiO2 film is evaporated on the Ba film followed by removing the mask and evaporating an Ni film 4 on the whole base metal surface for forming the base metal 2. An electron emissive substance 1 is applied to the surface of said base material 2, which is included into an electron gun for forming a diffusion control layer having about 60% of the coating ratio, for instance, in the position of the depth about 10mum by heat treatment. The coating ratio of the diffusion control layer shall be 30-95%, while it is desirable to have the depth of 3-20mum and the thickness of 0.05-0.5mum.</p>
申请公布号 JPS601718(A) 申请公布日期 1985.01.07
申请号 JP19830109343 申请日期 1983.06.20
申请人 TOSHIBA KK 发明人 NAKAMURA HIROYOSHI;KIMURA SAKAE;NIKAIDOU MASARU;OOUCHI YOSHIAKI
分类号 H01J1/14;H01J1/26;H01J9/04;(IPC1-7):H01J1/14 主分类号 H01J1/14
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