| 摘要 |
PURPOSE:To decrease long-wavelength side sensitivity and allow light to strike a semiconductor substrate from both top and reverse surfaces by reduing the thickness of semiconductor substrate parts as a light incidence part of a semiconductor where a picture element cell is formed. CONSTITUTION:When the substrate 40 is 200mum thick and a high-resistance n<-> layer is about 6mum thick, the thickness l1 of the substrate corresponding to areas as light incidence parts is decreased to cut the long-wavelength side sensitivity to desired wavelength. For example, when the substrate thickness l1 is redued to 10mum, the long-wavelength sensitivity is cut almost to 1mum. When an element having such structure that the substrate thickness l1 is decreased is manufactured, respective areas on the side of a gate electrode 6 are formed firstly. Then, a high-resistance substrate opposite to the gate electrode 6 is removed by selective etching technique to form a source electrode 10.
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