| 摘要 |
PURPOSE:To make it possible to form a uniform semiconductor single crystal layer, by a method wherein a semiconductor polycrystalline or amorphous layer provided such as to contact the surface of a single crystal substrate through a window and to extend as far as the surface of an insulating layer is formed in a divergent shape and locally heat-treated in the diverging direction. CONSTITUTION:A silicon polycrystalline or amorphous layer 5 is provided such as to contact the surface of a silicon substrate 3 through a window 6 formed in an insulating layer 4 and to extend as far as the surface of the insulating layer 4. The width W of the layer 5 is set such that the layer 5 has a divergent shape. In this state, the layer 5 is locally heated. In particular, scanning is gradually effected in the direction of the arrow D from a start point which is defined by the portion of the layer 5 at which it contacts a silicon single crystal substrate 1 through the window 6. The layer 5 is graudally melted in the diverging direction and thereby transformed into a single crystal. By previously doping the layer 5 with a desired impurity, it is possible to obtain a silicon single crystal layer of a desired conductivity type. |
