| 摘要 |
PURPOSE:To enable to perform a selective etching using Si3N4 by a method wherein a dry etching is conducted using CH2F2 and/or CH3F as reaction gas. CONSTITUTION:The material 4 to be etched is placed on either of a pair of flat type electrodes 2 and 3 provided facing each other in a vacuum chamber 1, and the vacuum chamber 1 is evacuated to the state of 10<-5> Torr or thereabout using an exhaust hole 5. CH2F2 is introduced into the vacuum chamber 1 using a gas introducing hole 6, and the pressure inside the chamber 1 is maintained at 0.03 Torr or thereabout. Then, plasma is generated between electrodes 2 and 3 by applying high frequency power to the electrode plate 2 using a high frequency power source 7, the introduced CH2F2 is decomposed and excited, and an etching is performed on the material to be processed 4. The etching speed of Si3N4 is far higher than that of SiO2 and Si, and a selective etching can be performed at a high ratio of selectivity. |
