| 摘要 |
PURPOSE:To obtain a large-sized single crystal of silicon carbide, in high reproducibility, at a relatively low temperature (about 2,300 deg.C), by the sublimation recrystallization process using a mixture of silicon carbide and a silicate at a specific ratio as the raw material. CONSTITUTION:A mixture of 90-40wt% of a silicon carbide (the one available commercially as an abrasive material can be used therefor) and 10-60wt% of a silicate is used as the seed raw material. A top-opened cylindrical substrate 2 for the deposition of graphite single crystal is placed in the cylindrical graphite crucible 1, and the above seed raw material 3 is filled in the gap between the crucible 1 and the substrate 2 to about 1/5 of the height of the crucile 1. The crucible is heated with the heater 4 in an inert gas atmosphere at about 2,300 deg.C to effect the deposition of the silicon carbide single crystal 5 on the substrate 2 (and the crucible 1). The inner pressure of the furnace is preferably maintained at about 500mm. H2O (gauge). |
