发明名称 METHOD FOR EXPOSURE BY CHARGED PARTICLE BEAM
摘要 PURPOSE:To perform the correction of a crosssectional measurement and a shot position of the beam in a short time by correcting an expansion caused by proximity effect of a pattern and by a ratio of lateral and longitudinal lengths by a mechanical means. CONSTITUTION:A CPU10 outputs data of a position of a pattern and a measurement of a slit and the data corresponding to the rank is read out from a correction data memory 16 and is sent to resistors 19 and 20 after correcting an expansion caused by proximity effect through a multiplier 17, an adder 18, a substractor 15 and an adder 14. The data corresponding to the rank from a memory 23 is read out from the memory 16 and the expansion caused by the ratio of longitudinal and lateral lengths of the pattern is corrected through a multiplier 22, a subtractor 21, a divider 24 and an adder 23. Then the corrected data of a slit measurement X2'', Y2'' and of beam shot position X1'', Y1'' are obtained by resistors 25 and 26. The data is sent to a measurement determination deflector 6 and a position determination deflector 9 to achieve drawing of the pattern of the predetermined measurement X2, Y2 at the predetermined position SO (X1, Y1).
申请公布号 JPS59211223(A) 申请公布日期 1984.11.30
申请号 JP19830085525 申请日期 1983.05.16
申请人 NIPPON DENSHI KK 发明人 SATOU HITOSHI
分类号 H01L21/027;G03F7/20;H01J37/317 主分类号 H01L21/027
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