发明名称 MAGNETORESISTANCE ELEMENT
摘要 PURPOSE:To make the intensity of a bias magnetic field sufficiently intense, by using a Permalloy film and a thin permanent magnet film as a multilayer shunt film in applying the bias magnetic field intensity. CONSTITUTION:On a substrate 1, a Permalloy film 2 comprising, e.g., Fe-82% Ni, is formed. Then, a Co-20%Pt alloy film 3, which is a permanent magnet film, is formed on the Permalloy film 2. Thereafter, an electrode 4 for conducting a current through said two-layer thin film is formed by Al, Au, or the like. The bias intensity is increased from a curve 6, which indicates the bias intensity caused by the magnetic field formed only by a current, by the amount of the permanent magnetic field, owing to the overlapped magnetic field of the magnetic field formed by the current and the magnetic field formed by the permanent magnet.
申请公布号 JPS59207675(A) 申请公布日期 1984.11.24
申请号 JP19830080894 申请日期 1983.05.11
申请人 HITACHI SEISAKUSHO KK 发明人 KITADA MASAHIRO;TANABE HIDEO;SHIMIZU NOBORU
分类号 G11B5/39;H01L43/08 主分类号 G11B5/39
代理机构 代理人
主权项
地址