| 摘要 |
<p>PURPOSE:To facilitate single-crystallization a non-single-crystal region of a semiconductor by a method wherein a film for energy beam absorption is formed on a top and side surface of an island shape semiconductor region composed of non-single-crystal semiconductor and this film is irradiated and heated by an energy beam. CONSTITUTION:A semiconductor region 14', composed of an Si-dioxide layer 12, an Si-nitride film 13 and polycrystalline Si, is formed on an Si substrate 11. An Si-dioxide film 15 is formed on the exposed surface of the region 14'. Then, an Si-nitride film 16, a polycrystalline Si film 17, an Si-dioxide film 18 and an Si- nitride film 19 are formed. The films 16, 18 and 19 are not always necessary but it is desirable to provide them. Then the film 17 is selectively heated by energy beam application. The film 17 and the region 14' are smelted by the heat. However, the temperature of the portion where the region 14' exists is descended from its circumference and the crystallization is started from the center part and the crystal grows toward the circumference. Thus the semiconductor region 14'' composed of single-crystal Si is formed. Then the films from 19 to 15 are removed and the region 14'' is exposed.</p> |
