| 摘要 |
PURPOSE:To reduce the recombination of electrons and holes and thus improve the sensitivity by a method wherein a layer forming a barrier against the carrier of at least one of photo-generating electrons and holes is provided in contact with at least one surface of an amrophous semiconductor. CONSTITUTION:The layer 2 forms the barrier against both the electrons and holes photo-generating in the amorphous semiconductor 1. Therefore, the carriers generated in said semiconductor 1 do not reach the surface, the interface between a substrate 5, or both, running through said semiconductor 1 by means of an external impressed field without being influenced by the recombination at these regions, and reaching electric terminals 3 and 4, thus leading out as a photocurrent. |
