| 摘要 |
PURPOSE:To surround an oscillating region by a semiconductor, forbidden band width thereof is large and a refractive index thereof is low, and to simplify a horizontal lateral mode and oscillate it stably by interposing a low impurity concentration region between the oscillating region and an impurity diffusion region. CONSTITUTION:There is an impurity diffusion region 21, which is formed through a diffusion by a closed pipe method of zinc, cadmium, etc., located on both sides of an oscillating region 20 at the central section of an active layer 13, and a low impurity concentration region 22, impurity concentration therein is lower than that in the impurity diffusion region 21, is interposed between the oscillating region 20 and the region 21. The active layer 13 consists of multiple quantum well type layers, but the state of laminating disappears in the impurity diffusion region 21, the active layer has the average composition of two semiconductors, a refractive index is made smaller than that of the oscillating region 20 under the state of laminating, and beams are confined in the lateral direction of light. |
