摘要 |
PURPOSE:To repeat a large number of batches continuously without cleaning a reaction furnace in a CVD device during processes, and to treat wafers efficiently by mounting a gate valve to the side wall of the reaction furnace and inserting and taking out the wafers through the gate valve. CONSTITUTION:A cover 2 in an upper section is left as it is closed at times except the times of maintenance and repair, a gate valve 6 is positioned at a position shown in the figure and a gate is opened on the loading of wfers, and the wafers are inserted and taken out by a wafer loader 4 through the gate. When the wafers are inserted and taken out completely, the gate valve 6 is moved as shown in the arrow, and the gate is closed. Since the gate valve is exposed directly to a high temperature, cooling wafer is passed in the valve, and an O ring 9 for sealing made of a heat-resistant rubber is protected. The flange 7 of the gate valve is also brought to the high temperature, but the flange is sealed by a metallic O ring 8 because there is no effective cooling method. |