发明名称 LOADING METHOD OF CHEMICAL VAPOR DEPOSITION DEVICE
摘要 PURPOSE:To repeat a large number of batches continuously without cleaning a reaction furnace in a CVD device during processes, and to treat wafers efficiently by mounting a gate valve to the side wall of the reaction furnace and inserting and taking out the wafers through the gate valve. CONSTITUTION:A cover 2 in an upper section is left as it is closed at times except the times of maintenance and repair, a gate valve 6 is positioned at a position shown in the figure and a gate is opened on the loading of wfers, and the wafers are inserted and taken out by a wafer loader 4 through the gate. When the wafers are inserted and taken out completely, the gate valve 6 is moved as shown in the arrow, and the gate is closed. Since the gate valve is exposed directly to a high temperature, cooling wafer is passed in the valve, and an O ring 9 for sealing made of a heat-resistant rubber is protected. The flange 7 of the gate valve is also brought to the high temperature, but the flange is sealed by a metallic O ring 8 because there is no effective cooling method.
申请公布号 JPS59200433(A) 申请公布日期 1984.11.13
申请号 JP19830074081 申请日期 1983.04.28
申请人 HITACHI DENSHI ENGINEERING KK 发明人 SOTOJIMA MASATO
分类号 H01L21/205;C23C16/54;H01L21/00;H01L21/31;H01L21/677 主分类号 H01L21/205
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