| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having high performance, high definition and flexibility by a batch method with high yield.SOLUTION: A semiconductor device 1 is manufactured by sequentially performing: an attachment process of attaching a flexible substrate 10 to one surface of a rigid support medium 12 via an adhesive 11; a thin film transistor element formation process of forming a thin film transistor element 20 on the flexible substrate 10; a peeling process of separating the flexible substrate 10 on which the thin film transistor element 20 is formed and the support medium 12; and an annealing process of performing annealing on the flexible substrate 10 after the peeling process at a temperature higher than a maximum temperature during the thin film transistor element formation process and the peeling process. In the thin film transistor element formation process, deposition of a gate electrode 30, a gate insulation film 40, an active layer 50, a source electrode and a drain electrode 70 is performed by a sputtering method. |
