| 摘要 |
PURPOSE:To equalize the characteristics of an element by forming an insulating film thin-layer by using a low-temperature process, implanting ions, removing the insulator thin-film and annealing an ion implanted layer. CONSTITUTION:An insulator thin-film 21 is formed on the surface of a semi- insulating compound semiconductor substrate 20 at a low temperature. When adopting a low-temperature process, the pyrolysis of the substrate 20 is removed approximately, and a surface transforming layer is not generated in subsequent processes. A resist mask 22 is shaped, and impurity ions 23 for an active layer are implanted. The mask 22 and the insulating film 21 are removed after the implantation, and a protective film 25 for annealing an ion implanted layer is formed. An N type active layer 24 for a Hall element activated through annealing is obtained. A photo-resist 26 is applied after annealing, the surface is patterned, windows for an electrode section are bored, and electrodes 27 are evaporated. Accordingly, the transformation of the surface can be prevented, and the quality of the element can be equalized.
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