| 摘要 |
PURPOSE:To prevent the occurrence of wire breakdown in an upper layer wiring at the upper part of a contact part, by forming a contact hole in an insulating film, embedding polycrystal Si, and forming a polycrystal Si wiring on the insulating film. CONSTITUTION:An SiO2 film 12 is formed on the surface of an Si substrate 11. A contact hole is opened by photoetching. A diffused wiring layer 13, which is formed at the contact part of the Si substrate, and a polycrystal Si layer 14 are connected. The polycrystal Si layer 14 becomes a wiring layer by photoetching. The surface of the contact part is formed in a flat shape. By the flattening of the polycrystal Si layer 14 at the ground contact part, the effect for preventing the breakdown of the wiring of Al and the like formed on an upper layer, which is formed on said layers furthermore, is obtained. |
