| 摘要 |
PURPOSE:To facilitate separation of each element of compound semiconductor by growing semiconductor crystals by MBE process without performing heat treatment after injecting ions to a specified region of the surface of a semiconductor substrate. CONSTITUTION:A separating layer region 2 is formed on a specified region of a substrate 1 comprising III-V group compound semiconductor or mixed crystal thereof by performing ion injection using charged particles or neutron. An activated layer 3 comprising III-V group compound semiconductor or mixed crystal thereof is grown on said substrate 1 using MBE process. The layer 4 of GaAs etc. grown on the region 2 has high resistance due to its polycrystalline characteristic against the semiconductor characteristic of the activated layer 3. The activated layer 5 part surrounded by the semi-insulative substrate 1 and highly resistant layer 4 is thus isolated from other parts, therefore, the element formed within this region acts independently. Accordingly, if a drain electrode 6, a source electrode 7, and a gate electrode 8 are formed, a GaAsMESFET having superior performance is obtd. |
