| 摘要 |
PURPOSE:To prevent the generation of electrical barrier by subjecting the semiconductor substrate to the specified laser irradiation treatment after a single- crystal thin film having a different band gap from said substrate is formed on the substrate so as to form a mixed crystal layer in a boundary of the substrate and the thin film. CONSTITUTION:A AnSe crystal thin film 2 is formed on a GaAs substrate 1 by MBE method. Next, laser beam 3 having a wavelength corresponding to a band gap of the GaAs substrate 1 is projected onto a surface of the substrate 1 uniformly through the ZnSe crystal thin film 2. The laser beam permeates through the AnSe thin film 2 smoothly as its wavelength energy is substantially smaller than a band gap of the ZnSe and when it reaches a surface of the substrate 1, it is absorbed there. As a result of absorption of the laser beam, generated heat causes a fused state in adjacency of the surface of the substrate 1, i.e. in adjacency of a boundary of the substrate 1 and the thin film 2, thereby forming a quadruple mixed crystal layer 4 in the boundary. |
