| 摘要 |
PURPOSE:To contrive to in raise the integration degree without generating step cuts by utilizing the unevenness of a thick insulation film on a semiconductor substrate. CONSTITUTION:A thermal oxide film 22 is formed on a P type Si substrate 21, and a resist pattern 23 is formed thereon, thus forming a recess 24..., thereafter a boron-phosphorus silicate glass film (BPSG) film is formed. A BPSG film pattern 26 is formed by forming a resist pattern at the stepwise difference between the recess 24 at the part other than the part to be isolated on this film and the periphery 25 of the recess. After vapor-depositing an Al layer over the entire surface and then isolating it at the stepwise difference between the recess 24 and a projection 27, patterning is performed. As a result, an Al wiring 281 is formed on the projection 27 of the thermal oxide film 22 at the point to be isolated, and an Al wiring 282 extending out to said periphery 25 via gentle BPSG film pattern 26 provided at the stepwise difference from the recess 24 is formed, respectively. |
