| 摘要 |
PURPOSE:To prevent the contact of source and drain with inversion preventive layer by doping an impurity for forming source and drain with an element isolating insulating film and an insulating film formed on a stepwise side wall of a gate electrode as masks. CONSTITUTION:After an element isolating region 32 of a semiconductor substrate 31 is selectively etched to form a groove, an impurity which provides the same conductive type as the substrate 31 is doped in the groove to form an inversion preventive layer 33. Then, the first insulating film 34 is buried in the groove, and the upper surface of the film 34 is formed higher than the surface of the substrate 31. Then, a gate insulating film 37 is selectively formed on the gate electrode 38 on the element forming region of the substrate 31, and the stepwise difference between the upper surface of the electrode 38 and the surface of the substrate 31 is formed smaller than that between the film 34 and the surface of the substrate 31. After the second insulating film 39 is formed by self-aligning on the side wall of the stepwise difference, with the films 34, 39 as masks an impurity for imparting reverse conductive type to the substrate 31 is doped on the surface of the substrate 31 to form source and drain regions 42, 43. |
