| 摘要 |
PURPOSE:To avoid yield of an inverted layer on the surface of a substrate, in a semiconductor element having a P-N junction, by providing a void part at a part other than the vicinity of the junction part when electrodes are coated by a moisture resisting polyimide resin in order to enhance with stand voltage at the exposed end surface of the P-N junction, and depositing a resin such as epoxy or silicone on the entire surface with the void while being buried. CONSTITUTION:A P-type emitter region 36 and a collector region 37 are diffused and formed in a surface layer part of an N-type Si substrate 31, which is to become a base. An SiO2 film 32 including the regions is deposited thereon. Openings are provided, and an emitter electrode 34 is attached to the region 36, and a collector electrode 35 is attached to the region 37. Then, said electrodes are coated by a polyimide resin layer 33. At this time, the part coated by the layer 33 is only the vicinity of the surface-exposed part of a P-N junction. A through hole 38 is provided at the intermediate part. Thereafter, with the through hole 38 being buried, an epoxy or silicone resin layer 39 is deposited, and a lateral P-N-P transistor is obtained. Thus a void part is provided in the layer 33 between the regions so that an inverted layer is not yielded in the substrate 31 even in a bias applying test at a high temperature. |
