发明名称 DRIVING CIRCUIT FOR SEMICONDUCTOR LASER
摘要 PURPOSE:To prevent a pattern effect based on the delay of the change of charge density, and to simplify the adjustment of an optical output waveform by making DC bias lower than a threshold value for a period of a low level in ''1'' of an input RZ pulse. CONSTITUTION:When a RZ pulse input signal of a period T is transmitted over a gate G1, an output from the gate is applied to a transistor TR1 as an input 1 as it is. The transistor TR1 and a transistor TR2 are differential-connected to form a current switch, and predetermined collector currents I1 are generated when the level of the input 1 is larger than reference voltage VR applied to the transistor TR2. On the other hand, an inversion output from the gate G1 is delayed only by the half period T/2 of RZ pulses through a delay circuit D, and applied to a transistor TR3 as an input 2 to generate currents I2. Since driving currents ILD to a semiconductor laser LD take a current value IB smaller than a threshold value for a period of a low level immediately after a high level in input pulses ''1'', charges in the semiconductor laser LD disappear for the period.
申请公布号 JPS59177982(A) 申请公布日期 1984.10.08
申请号 JP19830051283 申请日期 1983.03.26
申请人 FUJITSU KK 发明人 ENDOU TAKEMI;ARAI MASANORI
分类号 H01S5/042;H01S5/062;(IPC1-7):H01S3/096 主分类号 H01S5/042
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