| 摘要 |
PURPOSE:To avoid the defective form of short circuit between electrodes by a method wherein at least one electric conductor of a capacitor with an insulation film sandwiched between said conductors is made of low resistant polycrystalline Si. CONSTITUTION:The low resistant polycrystalline Si 3 is used as the material of the lower electrode provided on the insulation film 2 on a semiconductor substrate 1. Said Si is used as the lead-out electrode for the emitter and collector. Arsenic is ion-implanted in said Si to contrive to reduce the resistance, and its surface is covered with Pt silicide. As the upper electrode, an Al electrode is formed on a plasma nitride film 5 supporting the capacitor. |
