| 摘要 |
PURPOSE:To prevent the revaporization of Sb when a heat treatment is performed by a method wherein an Sb film and an Ni film are successively provided on the surface of a semiconductor, and subsequently an electrode having ohmic contact is formed on the semiconductor surface by performing a heat treatment. CONSTITUTION:An Sb thin film is vapor-deposited in a vacuum atmosphere on the surface of a semiconductor. Subsequently, an Ni thin film is vapor-deposited under the same condition. Then, a heat treatment is performed all over the above in inert gas. As a result, Sb and Ni are diffused on the semiconductor, and a high density layer 1 is formed between an electrode 2 and the semiconductor, thereby enabling to prevent the reevaporation of Sb when a heat treatment is performed and to expedite the diffusion of Ni and Sb. |
