发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To contrive the matching of modes by making the constant of propagation of a laser oscillating region agree with that of a window region by a method wherein the flat part of an active layer is arranged in the neighborhood of both end surfaces in continuity to the curved part of said layer. CONSTITUTION:An N-GaAs current blocking layer 32 is formed on a P-GaAs substrate 31. A stripe groove is worked in the layer 32 and the substrate 31. A P-GaAlAs clad layer 33, the GaAs or GaAlAs active layer 34, an N-GaAlAs clad layer 35, and an N-GaAs layer 36 are successively laminated thereon. Then, the channel width Wc1 of a laser oscillation operating region 21 is more enlarged than the channel width Wc2 of the window regions 22 and 22'. The active layer 34 is curved at the region 21, and the width Wg1 of a refractive index optical guide becomes narrower than the channel width Wc1. The active layer 34 is flat at the regions 22 and 22', and the width Wg2 of the optical guide is equal to the channel width Wc2.
申请公布号 JPS59175182(A) 申请公布日期 1984.10.03
申请号 JP19830049149 申请日期 1983.03.23
申请人 SHARP KK 发明人 YANO MORICHIKA;YAMAMOTO SABUROU;HAYASHI HIROSHI
分类号 H01S5/00;H01S5/10;H01S5/223;H01S5/24 主分类号 H01S5/00
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