| 摘要 |
PURPOSE:To form isolation regions having little encroachment of a silicon oxide film in the titled device by a method wherein a thermal oxide film for making the interface to come in contact with silicon stabilize is in advance formed on the interelement isolating regions. CONSTITUTION:A silicon nitriding film 3 is formed on a silicon substrate 1' and a resist is applied thereon for forming interelement isolating patterns 7 by irradiating an electron beam, etc. Then, the silicon film 3 and the substrate 1' in the isolation regions 7 are etched by performing an anisotropic etching for removing the resist and, after that, thin silicon oxide films 2 are formed in a degree that no bird's beak is created. An insulating film 5 is deposited and after a resist 6 is applied on this film 5, light is irradiated in such a way that resists 6' are left on the isolating regions 7 for forming a pattern. After that, the insulating film 5 is removed using this pattern as the mask and the resists 6' are removed. According to this method, isolation regions 5 having no encroachment (bird's beak) of a silicon oxide film can be formed. |
