| 摘要 |
PURPOSE:To prevent a film decrease of a gap layer and to form a gap having a accuracy by forming a protective layer of a magnetic material on a magnetic gap formed part, forming an insulating layer on a gap layer except the protective layer formed part, subsequently, forming a coil layer, and forming a magnetic layer of the upper part on an area containing the protective layer. CONSTITUTION:For instance, SiO2 is formed as a gap layer 5 to a film thickness of 6,000Angstrom by sputtering on a lower magnetic layer 2a formed on a substrate 1, and as for a protective layer 8, a magnetic material, for instance, NiFe is formed to a film thickness of about several thousand Angstrom on an area in which formation of a gap layer is prearranged. In order to form a coil layer 7 by plating, a thin conductive layer is formed on the whole surface of the substrate, and subsequently, the coil layer is formed by plating. After this process, ion etching is executed in order to remove the conductive layer. In accordance with a sectional shape of the coil layer 7, a difference of distribution in a wafer of an etching rate, etc., over-etching of 4-5min is necessary, and as for the protective layer 8, its film thickness is decreased by the overetching, but the film thickness of the gap layer 5 is kept as it is. The remaining part of the protective layer 8 is a magnetic material, therefore, it becomes a part of a magnetic layer 2 of the upper part. |
