发明名称 |
Process for producing In Sn oxide layers |
摘要 |
The invention relates to a process for producing In Sn oxide layers by cathode sputtering alloys of the metals indium and tin. Such layers are optically transparent and metallically conducting, and they are used, for example, as antireflection layers in solar cells and on heatable window panes. While retaining transparency in the visible range, the electrical conductivity hitherto achieved in such In Sn oxide layers is increased, according to the invention, by choosing, as the substrate temperature at which deposition is carried out, the maximum still permissible temperature of the substrate material in question and matching this maximum possible substrate temperature to the partial pressure of oxygen.
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申请公布号 |
DE3309955(A1) |
申请公布日期 |
1984.09.20 |
申请号 |
DE19833309955 |
申请日期 |
1983.03.19 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
LEIDICH,DIETER,DIPL.-ING.;NIEMANN,EKKEHARD,DIPL.-PHYS.;FISCHER,ROLAND,DR.PHIL.NAT. |
分类号 |
C23C14/08;C23C14/54;H01L31/0216;H01L31/18;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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